True Blue Inorganic Optoelectronic Devices
Identifieur interne : 000141 ( 1968/Analysis ); précédent : 000140; suivant : 000142True Blue Inorganic Optoelectronic Devices
Auteurs : D. A. Gaul [États-Unis] ; W. S. Rees Jr. [États-Unis]Source :
- Advanced Materials [ 0935-9648 ] ; 2000-06.
English descriptors
- Teeft :
- Acceptor, Acceptor concentration, Acceptor concentrations, Acceptor level, Acceptor levels, Akimoto, Alkyl substituent, Ambient temperature, Appl, Bandgap, Blue emission, Blue laser, Blue optoelectronic devices, Buffer layer, Carbon incorporation, Charge transfer, Chem, Chemical vapor deposition, Compound semiconductors, Conduction band, Cryst, Crystal lattice, Defect, Deposition, Device lifetime, Diode, Direct interatomic interaction, Dopant, Dopant source, Dopants, Doping, Doping effect, Doping efficiency, Epitaxy, Film growth, Film quality, Further research, Gallium nitride, Gaul, Georgia institute, Georgia tech, Gmbh, Growth temperatures, Heteroepitaxial growth, High concentration, High levels, High resistivity, High temperature, Homoepitaxial growth, Hydrogen passivation, Incorporation, Interested readers, Interstitial incorporation, Joint appointment, July, Laser, Laser diodes, Last decade, Lattice, Lattice constants, Lattice mismatch, Less energy, Lett, Lower growth temperatures, Mater, Material flow, Materials science, Materials systems, Multicolored leds, Nitrogen concentrations, Nitrogen incorporation, Nitrogen levels, Nitrogen radicals, Numerous reports, Omvpe, Optoelectronic, Optoelectronic devices, Organic polymers, Organometallic vapor phase epitaxy, Phys, Point defects, Precursor, Professor william, Promising results, Rees, Research interests, Room temperature, Secondary amines, Selenide, Selenium, Selenium site, Semiconductor, Shallow acceptor levels, Silicon carbide, Single material, Solid state devices, Solid state physics, Substrate surface, Technische berlin, Vapor phase stability, Verlag, Verlag gmbh, Visible spectrum, Weinheim, Zinc selenide, Zinc site, Znse.
Abstract
The realization of blue light‐emitting optoelectronic devices has attracted much attenion. Here the leading candidates (ZnSe, GaN, SiC, organic polymers) are examined and research towards the improvement of zinc selenide in particular is reviewed. Deposition methods, precursors, and p‐type dopants are all discussed. The Figure shows a p–n junction after equilibration.
The realization of blue light‐emitting optoelectronic devices has attracted much attention. Here the leading candidates (ZnSe, GaN, SiC, organic polymers) are examined, and research towards the improvement of zinc selenide in particular is reviewed. Deposition methods, precursors, and p‐type dopants are all discussed. The Figure shows a p–n junction after equilibration.
Url:
DOI: 10.1002/1521-4095(200006)12:13<935::AID-ADMA935>3.0.CO;2-J
Affiliations:
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- to stream Main, to step Curation: 001926
- to stream Main, to step Exploration: 001926
- to stream 1968, to step Extraction: 000141
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ISTEX:981735FB5C4825E1C6C5CBBECE7A70BD1B0EC456Le document en format XML
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Here the leading candidates (ZnSe, GaN, SiC, organic polymers) are examined and research towards the improvement of zinc selenide in particular is reviewed. Deposition methods, precursors, and p‐type dopants are all discussed. The Figure shows a p–n junction after equilibration.</div><div type="abstract" xml:lang="en">The realization of blue light‐emitting optoelectronic devices has attracted much attention. Here the leading candidates (ZnSe, GaN, SiC, organic polymers) are examined, and research towards the improvement of zinc selenide in particular is reviewed. Deposition methods, precursors, and p‐type dopants are all discussed. The Figure shows a p–n junction after equilibration.</div></front></TEI><affiliations><list><country><li>États-Unis</li></country><region><li>Géorgie (États-Unis)</li></region></list><tree><country name="États-Unis"><region name="Géorgie (États-Unis)"><name sortKey="Gaul, D A" sort="Gaul, D A" uniqKey="Gaul D" first="D. A." last="Gaul">D. A. Gaul</name></region><name sortKey="Rees Jr, W S" sort="Rees Jr, W S" uniqKey="Rees Jr W" first="W. S." last="Rees Jr.">W. S. Rees Jr.</name><name sortKey="Rees Jr, W S" sort="Rees Jr, W S" uniqKey="Rees Jr W" first="W. S." last="Rees Jr.">W. S. Rees Jr.</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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